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switching diode造句

"switching diode"是什么意思   

例句與造句

  1. Detail specification for silicon coaxial resistive switching diode
    硅同軸電阻開關(guān)二極管詳細(xì)規(guī)范
  2. Detail specification for silicon microwave switching diode , rod mounted
    安裝于桿上的硅微波開關(guān)二極管詳細(xì)規(guī)范
  3. Band switching diode
    波段轉(zhuǎn)換開關(guān)二極管
  4. Switching diode , crystal
    晶體交換二極管
  5. Semiconductor discrete device . detail specification for type 2ck82 silicon switching diode
    半導(dǎo)體分立器件. 2ck82型硅開關(guān)二極管詳細(xì)規(guī)范
  6. It's difficult to find switching diode in a sentence. 用switching diode造句挺難的
  7. Semiconductor discrete device . detail specification for type 2ck85 silicon switching diode
    半導(dǎo)體分立器件. 2ck85型硅開關(guān)二極管詳細(xì)規(guī)范
  8. Semiconductor discrete device . detail specification for silicon switching diode for type 2ck76
    半導(dǎo)體分立器件. 2ck76型硅開關(guān)二極管詳細(xì)規(guī)范
  9. Semiconductor discrete devices detail specification for type 2ck141 microwave switch diode
    半導(dǎo)體分立器件. 2ck141型微波開關(guān)二極管.詳細(xì)規(guī)范
  10. Semiconductor discrete devices detail specification for type 2ck140 microwave switch diode
    半導(dǎo)體分立器件. 2ck140型微波開關(guān)二極管.詳細(xì)規(guī)范
  11. Semiconductor discrete device . detail specification for silicon switching diode for type 2ck105
    半導(dǎo)體分立器件. 2ck105型硅開關(guān)二極管詳細(xì)規(guī)范
  12. Semiconductor discrete device . detail specification for silicon switching diode for type 2ck4148
    半導(dǎo)體分立器件. 2ck4148型硅開關(guān)二極管詳細(xì)規(guī)范
  13. Semiconductor discrete devices . detail specification for type 2ek150 gaas high speed switching diode
    半導(dǎo)體分立器件2ek150型砷化鎵高速開關(guān)二極管詳細(xì)規(guī)范
  14. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - signal diodes , switching diodes and controlled avalanche diodes
    電子元器件質(zhì)量評(píng)定協(xié)調(diào)體系.半導(dǎo)體分立器件.空白詳細(xì)規(guī)范.信號(hào)二極管開關(guān)二極管和可控雪崩二極管
  15. Abstract : various factors affecting the yield of packaging process of high speed switching diodes were analyzed on die structure and packaging process of devices , and steps have been taken to improve the yield of the dioldes
    摘要:從器件的芯片結(jié)構(gòu)及封焊工藝入手,分析了封焊工藝影響成品率的各種原因,并采取相應(yīng)的改進(jìn)措施,提高了器件的成品率。
  16. With the more and more extensive application of power electronics technology , especially with the increasing frequency of main switching device , there have a higher requirement to the power switching diode . the si p - i - n diode have played an important role in these areas so many years
    隨著電力電子技術(shù)應(yīng)用的深入,尤其是主開關(guān)器件工作頻率的不斷提高,對(duì)功率二極管性能提出了更高的要求,多年來(lái)硅p - i - n二極管一直在這方面扮演著重要角色。

相鄰詞匯

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